科创中国

An XPS study on the chemical bond structure at the interface between SiO_xN_y and N doped polyethylene terephthalate

• 摘要：

  The super-thin silicon oxynitride (SiO_xN_y) films were deposited onto the N doped polyethylene terephthalate (PET) surface. Varying the N doping parameters, the different chemical bond structures were obtained at the interface between the SiO_xN_y film and the PET surface. X-ray photoelectron spectra results showed that at the initial stage of SiO_xN_y film growth, the CN bonds could be broken and C-N-Si crosslink bonds could be formed at the interface of SiO_xN _yPET, which CN bonds could be formed onto the PET surface during the N doping process. At these positions, the SiO_xN_y film could be crosslinked well onto the PET surface. Meanwhile, the doped N could crosslink the SiO₄ and SiN₄ tetrahedrons, which could easily form the dense layer structure at the initial stage of SiO _xN_y film growth, instead of the ring andor chain structures of SiO₄ tetrahedrons crosslinked by O. Finally, from the point of applying SiO_xN_yPET complex as the substrate, the present work reveals a simple way to crosslink them, as well as the crosslink model and physicochemical mechanism happened at the interface of complex.

• 作者：

  Wanyu Ding;Li Li;Lina Zhang;东英 巨;寿 彭;Weiping Chai

• 刊名：

  Journal of Chemical Physics

• 在线出版时间：

  2013-3-14