The super-thin silicon oxynitride (SiOxNy) films were deposited onto the N doped polyethylene terephthalate (PET) surface. Varying the N doping parameters, the different chemical bond structures were obtained at the interface between the SiOxNy film and the PET surface. X-ray photoelectron spectra results showed that at the initial stage of SiOxNy film growth, the CN bonds could be broken and C-N-Si crosslink bonds could be formed at the interface of SiOxN yPET, which CN bonds could be formed onto the PET surface during the N doping process. At these positions, the SiOxNy film could be crosslinked well onto the PET surface. Meanwhile, the doped N could crosslink the SiO4 and SiN4 tetrahedrons, which could easily form the dense layer structure at the initial stage of SiO xNy film growth, instead of the ring andor chain structures of SiO4 tetrahedrons crosslinked by O. Finally, from the point of applying SiOxNyPET complex as the substrate, the present work reveals a simple way to crosslink them, as well as the crosslink model and physicochemical mechanism happened at the interface of complex.
Wanyu Ding;Li Li;Lina Zhang;东英 巨;寿 彭;Weiping Chai
Journal of Chemical Physics